BC847CDXV6T1G, SOT-563-6, Bipolar Transistors - BJT
onsemi
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Параметры
Категория | Bipolar Transistors - BJT |
ECCN | EAR99 |
Упаковка | Reel, Cut Tape, Tape & Reel, Tape and Reel (лента в катушке) |
Кол-во в упаковке | 4000 |
Корпус | SOT-563-6 |
Вес, г | 0.003 |
Product Class Name | Transistors bipolaires - BJT |
RoHS - Mouser | Y |
Mounting Style | SMD/SMT |
Transistor Polarity | NPN |
Configuration | Dual |
Collector- Emitter Voltage VCEO Max | 45 V |
Collector- Base Voltage VCBO | 45 V |
Emitter- Base Voltage VEBO | 6 V |
Collector-Emitter Saturation Voltage | 600 mV |
Maximum DC Collector Current | 100 mA |
Pd - Power Dissipation | 500 mW |
Gain Bandwidth Product fT | 100 MHz |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Series | BC847CDXV6 |
Continuous Collector Current | 100 mA |
DC Collector/Base Gain hfe Min | 420 |
Высота | 0.55 mm |
Длина | 1.6 mm |
Product Type | BJTs - Bipolar Transistors |
Subcategory | Transistors |
Technology | Si |
Width | 1.2 mm |
Тип | 2 NPN (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max) | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
Мощность | 500mW |
Frequency - Transition | 100MHz |
Рабочая температура | -55°C ~ 150°C (TJ) |
Монтаж | Surface Mount |
Standard Pack Qty (SPQ) | 4000 |