FCPF20N60, TO-220-3, MOSFET
onsemi
Загрузка...
Параметры
Категория | MOSFET |
ECCN | EAR99 |
Упаковка | Tube, Tube (туба) |
Кол-во в упаковке | 50 |
Корпус | TO-220-3 |
Вес, г | 2 |
Product Class Name | MOSFET |
RoHS - Mouser | E |
Technology | Si |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Id - Continuous Drain Current | 20 A |
Rds On - Drain-Source Resistance | 190 mOhms |
Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 39 W |
Channel Mode | Enhancement |
Series | FCPF20N60 |
Configuration | Single |
Fall Time | 65 ns |
Forward Transconductance - Min | 17 S |
Высота | 16.3 mm |
Длина | 10.67 mm |
Product Type | MOSFET |
Rise Time | 140 ns |
Subcategory | MOSFETs |
Тип | 1 N-Channel |
Type | MOSFET |
Typical Turn-Off Delay Time | 230 ns |
Typical Turn-On Delay Time | 62 ns |
Width | 4.7 mm |
Standard Pack Qty (SPQ) | 1000 |