FCPF20N60, TO-220-3, MOSFET
onsemi
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Параметры
| Категория | MOSFET |
| ECCN | EAR99 |
| Упаковка | Tube, Tube (туба) |
| Кол-во в упаковке | 50 |
| Корпус | TO-220-3 |
| Вес, г | 2 |
| Product Class Name | MOSFET |
| RoHS - Mouser | E |
| Technology | Si |
| Mounting Style | Through Hole |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Id - Continuous Drain Current | 20 A |
| Rds On - Drain-Source Resistance | 190 mOhms |
| Vgs - Gate-Source Voltage | - 30 V, + 30 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 39 W |
| Channel Mode | Enhancement |
| Series | FCPF20N60 |
| Configuration | Single |
| Fall Time | 65 ns |
| Forward Transconductance - Min | 17 S |
| Высота | 16.3 mm |
| Длина | 10.67 mm |
| Product Type | MOSFET |
| Rise Time | 140 ns |
| Subcategory | MOSFETs |
| Тип | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 230 ns |
| Typical Turn-On Delay Time | 62 ns |
| Width | 4.7 mm |
| Standard Pack Qty (SPQ) | 1000 |