FQPF27P06, TO-220FP-3, MOSFET
onsemi
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Параметры
| Категория | MOSFET |
| ECCN | EAR99 |
| Упаковка | Tube |
| Кол-во в упаковке | 50 |
| Корпус | TO-220FP-3 |
| Вес, г | 2 |
| Product Class Name | MOSFET |
| RoHS - Mouser | E |
| Technology | MOSFET (Metal Oxide) |
| Mounting Style | Through Hole |
| Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 17 A |
| Rds On - Drain-Source Resistance | 70 mOhms |
| Vgs - Gate-Source Voltage | - 25 V, + 25 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 33 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 47 W |
| Channel Mode | Enhancement |
| Tradename | QFET |
| Series | FQPF27P06 |
| Configuration | Single |
| Fall Time | 90 ns |
| Forward Transconductance - Min | 12 S |
| Высота | 16.07 mm |
| Длина | 10.36 mm |
| Product Type | MOSFET |
| Rise Time | 185 ns |
| Subcategory | MOSFETs |
| Тип | 1 P-Channel |
| Type | P Channel |
| Typical Turn-Off Delay Time | 30 ns |
| Typical Turn-On Delay Time | 18 ns |
| Width | 4.9 mm |
| Drain Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 17A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 70mΩ@10V,8.5A |
| Power Dissipation (Pd) | 47W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Input Capacitance (Ciss@Vds) | 1.4nF@25V |
| Total Gate Charge (Qg@Vgs) | 43nC@10V |
| Рабочая температура | -55°C ~ 175°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 8.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
| Power Dissipation (Max) | 47W (Tc) |
| Монтаж | Through Hole |
| Standard Pack Qty (SPQ) | 1000 |