FQPF27P06, TO-220FP-3, MOSFET
onsemi
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Параметры
Категория | MOSFET |
ECCN | EAR99 |
Упаковка | Tube |
Кол-во в упаковке | 50 |
Корпус | TO-220FP-3 |
Вес, г | 2 |
Product Class Name | MOSFET |
RoHS - Mouser | E |
Technology | MOSFET (Metal Oxide) |
Mounting Style | Through Hole |
Transistor Polarity | P-Channel |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 17 A |
Rds On - Drain-Source Resistance | 70 mOhms |
Vgs - Gate-Source Voltage | - 25 V, + 25 V |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Qg - Gate Charge | 33 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 47 W |
Channel Mode | Enhancement |
Tradename | QFET |
Series | FQPF27P06 |
Configuration | Single |
Fall Time | 90 ns |
Forward Transconductance - Min | 12 S |
Высота | 16.07 mm |
Длина | 10.36 mm |
Product Type | MOSFET |
Rise Time | 185 ns |
Subcategory | MOSFETs |
Тип | 1 P-Channel |
Type | P Channel |
Typical Turn-Off Delay Time | 30 ns |
Typical Turn-On Delay Time | 18 ns |
Width | 4.9 mm |
Drain Source Voltage (Vdss) | 60V |
Continuous Drain Current (Id) | 17A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 70mΩ@10V,8.5A |
Power Dissipation (Pd) | 47W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Input Capacitance (Ciss@Vds) | 1.4nF@25V |
Total Gate Charge (Qg@Vgs) | 43nC@10V |
Рабочая температура | -55°C ~ 175°C (TJ) |
FET Type | P-Channel |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 70mOhm @ 8.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
Power Dissipation (Max) | 47W (Tc) |
Монтаж | Through Hole |
Standard Pack Qty (SPQ) | 1000 |