IRFB3004PBF, TO-220-3, MOSFET
Infineon Technologies
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Параметры
Категория | MOSFET |
ECCN | EAR99 |
Упаковка | Tube, Tube (туба) |
Кол-во в упаковке | 1000 |
Корпус | TO-220-3 |
Вес, г | 2 |
Product Class Name | MOSFET |
RoHS - Mouser | Y |
Technology | Si |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 40 V |
Id - Continuous Drain Current | 340 A |
Rds On - Drain-Source Resistance | 1.4 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1.8 V |
Qg - Gate Charge | 240 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 380 W |
Channel Mode | Enhancement |
Configuration | Single |
Высота | 15.65 mm |
Длина | 10 mm |
Product Type | MOSFET |
Subcategory | MOSFETs |
Width | 4.4 mm |
Package | TO220 |
Standard Pack Qty (SPQ) | 50 |
Packing Option | TUBE |
Box Qty | 1000 |
Dry Pack | NON DRY |