IRFB3004PBF, TO-220-3, MOSFET

Infineon Technologies

IRFB3004PBF
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Параметры

Категория MOSFET
ECCN EAR99
Упаковка Tube, Tube (туба)
Кол-во в упаковке 1000
Корпус TO-220-3
Вес, г 2
Product Class Name MOSFET
RoHS - Mouser Y
Technology Si
Mounting Style Through Hole
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V
Id - Continuous Drain Current 340 A
Rds On - Drain-Source Resistance 1.4 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.8 V
Qg - Gate Charge 240 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 380 W
Channel Mode Enhancement
Configuration Single
Высота 15.65 mm
Длина 10 mm
Product Type MOSFET
Subcategory MOSFETs
Width 4.4 mm
Package TO220
Standard Pack Qty (SPQ) 50
Packing Option TUBE
Box Qty 1000
Dry Pack NON DRY

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