IRFB3006PBF, TO-220-3, MOSFET
Infineon Technologies
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Параметры
| Категория | MOSFET |
| ECCN | EAR99 |
| Упаковка | Tube, Tube (туба) |
| Кол-во в упаковке | 1000 |
| Корпус | TO-220-3 |
| Вес, г | 2 |
| Product Class Name | MOSFET |
| RoHS - Mouser | Y |
| Technology | MOSFET (Metal Oxide) |
| Mounting Style | Through Hole |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 270 A |
| Rds On - Drain-Source Resistance | 2.1 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.8 V |
| Qg - Gate Charge | 300 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 375 W |
| Channel Mode | Enhancement |
| Configuration | Single |
| Высота | 15.65 mm |
| Длина | 10 mm |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Width | 4.4 mm |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 170A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 8970 pF @ 50 V |
| Power Dissipation (Max) | 375W (Tc) |
| Рабочая температура | -55°C ~ 175°C (TJ) |
| Монтаж | Through Hole |
| Package | TO220 |
| Standard Pack Qty (SPQ) | 50 |
| Packing Option | TUBE |
| Box Qty | 1000 |
| Dry Pack | NON DRY |