IRFB3006PBF, TO-220-3, MOSFET
Infineon Technologies
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Параметры
Категория | MOSFET |
ECCN | EAR99 |
Упаковка | Tube, Tube (туба) |
Кол-во в упаковке | 1000 |
Корпус | TO-220-3 |
Вес, г | 2 |
Product Class Name | MOSFET |
RoHS - Mouser | Y |
Technology | MOSFET (Metal Oxide) |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 270 A |
Rds On - Drain-Source Resistance | 2.1 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1.8 V |
Qg - Gate Charge | 300 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 375 W |
Channel Mode | Enhancement |
Configuration | Single |
Высота | 15.65 mm |
Длина | 10 mm |
Product Type | MOSFET |
Subcategory | MOSFETs |
Width | 4.4 mm |
FET Type | N-Channel |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.5mOhm @ 170A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 8970 pF @ 50 V |
Power Dissipation (Max) | 375W (Tc) |
Рабочая температура | -55°C ~ 175°C (TJ) |
Монтаж | Through Hole |
Package | TO220 |
Standard Pack Qty (SPQ) | 50 |
Packing Option | TUBE |
Box Qty | 1000 |
Dry Pack | NON DRY |