PMV33UPE,215, SOT-23-3, MOSFET

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PMV33UPE,215
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Параметры

Категория MOSFET
ECCN EAR99
Упаковка Reel, Cut Tape, Tape & Reel, Tape and Reel
Кол-во в упаковке 3000
Корпус SOT-23-3
Вес, г 0.008
Product Class Name MOSFET
RoHS - Mouser Y
Technology MOSFET (Metal Oxide)
Mounting Style SMD/SMT
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 5.3 A
Rds On - Drain-Source Resistance 30 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage 950 mV
Qg - Gate Charge 14.7 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 980 mW
Channel Mode Enhancement
Product Type MOSFET
Subcategory MOSFETs
Part # Aliases 934066842215
Drain Source Voltage (Vdss) 20V
Continuous Drain Current (Id) 4.4A
Power Dissipation (Pd) 490mW
Drain Source On Resistance (RDS(on)@Vgs,Id) 36mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)@Id) 950mV@250uA
Type Small Signal
Input Capacitance (Ciss@Vds) 1.82nF@10V
Total Gate Charge (Qg@Vgs) 22.1nC@4.5V
Рабочая температура -55C to 150C
FET Type P-Channel
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 36mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22.1 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1820 pF @ 10 V
Power Dissipation (Max) 490mW (Ta)
Монтаж Surface Mount
Continuous Drain Current 4.4(A)
Gate-Source Voltage (Max) 8(V)
Pin Count 3
Mounting Surface Mount
Operating Temperature Classification Military
Rad Hardened No
Polarity P
Drain-Source On-Volt 20(V)
Power Dissipation 0.98(W)
Number of Elements 1
Package SOT23
Standard Pack Qty (SPQ) 3000
Box Qty 3000

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