PMV33UPE,215, SOT-23-3, MOSFET
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Параметры
Категория | MOSFET |
ECCN | EAR99 |
Упаковка | Reel, Cut Tape, Tape & Reel, Tape and Reel |
Кол-во в упаковке | 3000 |
Корпус | SOT-23-3 |
Вес, г | 0.008 |
Product Class Name | MOSFET |
RoHS - Mouser | Y |
Technology | MOSFET (Metal Oxide) |
Mounting Style | SMD/SMT |
Transistor Polarity | P-Channel |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 5.3 A |
Rds On - Drain-Source Resistance | 30 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V |
Vgs th - Gate-Source Threshold Voltage | 950 mV |
Qg - Gate Charge | 14.7 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 980 mW |
Channel Mode | Enhancement |
Product Type | MOSFET |
Subcategory | MOSFETs |
Part # Aliases | 934066842215 |
Drain Source Voltage (Vdss) | 20V |
Continuous Drain Current (Id) | 4.4A |
Power Dissipation (Pd) | 490mW |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 36mΩ@4.5V,3A |
Gate Threshold Voltage (Vgs(th)@Id) | 950mV@250uA |
Type | Small Signal |
Input Capacitance (Ciss@Vds) | 1.82nF@10V |
Total Gate Charge (Qg@Vgs) | 22.1nC@4.5V |
Рабочая температура | -55C to 150C |
FET Type | P-Channel |
Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 36mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 22.1 nC @ 4.5 V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 1820 pF @ 10 V |
Power Dissipation (Max) | 490mW (Ta) |
Монтаж | Surface Mount |
Continuous Drain Current | 4.4(A) |
Gate-Source Voltage (Max) | 8(V) |
Pin Count | 3 |
Mounting | Surface Mount |
Operating Temperature Classification | Military |
Rad Hardened | No |
Polarity | P |
Drain-Source On-Volt | 20(V) |
Power Dissipation | 0.98(W) |
Number of Elements | 1 |
Package | SOT23 |
Standard Pack Qty (SPQ) | 3000 |
Box Qty | 3000 |