BC847C-7-F, SOT-23-3, Bipolar Transistors - BJT

Diodes

BC847C-7-F
Загрузка...

Параметры

Категория Bipolar Transistors - BJT
ECCN EAR99
Упаковка Reel, Cut Tape, Tape and Reel (лента в катушке), Tape & Reel
Кол-во в упаковке 3000
Корпус SOT-23-3
Вес, г 0.033
Product Class Name Transistors bipolaires - BJT
RoHS - Mouser Y
Mounting Style SMD/SMT
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 45 V
Collector- Base Voltage VCBO 50 V
Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 600 mV
Maximum DC Collector Current 100 mA
Pd - Power Dissipation 310 mW
Gain Bandwidth Product fT 300 MHz
Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C
Series BC847C
DC Collector/Base Gain hfe Min 420 at 2 mA, 5 V
Высота 1 mm
Длина 3.05 mm
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Technology Si
Width 1.4 mm
Collector Cut-Off Current (Icbo) 15nA
Collector-Emitter Breakdown Voltage (Vceo) 45V
Power Dissipation (Pd) 300mW
DC Current Gain (hFE@Ic,Vce) 420@2mA,5V
Collector Current (Ic) 100mA
Transition Frequency (fT) 300MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 200mV@100mA,5mA
Тип NPN
Рабочая температура -65°C ~ 150°C (TJ)
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V
Мощность 300 mW
Frequency - Transition 300MHz
Монтаж Surface Mount

Техническая документация

Аналоги

Цены BC847C-7-F Diodes в России