BC847CLT1G, SOT-23-3, Bipolar Transistors - BJT

onsemi

BC847CLT1G
Загрузка...
Есть аналоги на складе в России:

Параметры

Категория Bipolar Transistors - BJT
ECCN EAR99
Упаковка Reel, Cut Tape, Tape & Reel, Tape and Reel, Tape and Reel (лента в катушке)
Кол-во в упаковке 3000
Корпус SOT-23-3
Вес, г 0.03
Product Class Name Transistors bipolaires - BJT
RoHS - Mouser Y
Mounting Style SMD/SMT
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 45 V
Collector- Base Voltage VCBO 50 V
Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 600 mV
Maximum DC Collector Current 100 mA
Pd - Power Dissipation 225 mW
Gain Bandwidth Product fT 100 MHz
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series BC847CL
Continuous Collector Current 100 mA
DC Collector/Base Gain hfe Min 420
Высота 0.94 mm
Длина 2.9 mm
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Technology Si
Width 1.3 mm
Тип NPN
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V
Мощность 300 mW
Frequency - Transition 100MHz
Рабочая температура -55℃~+150℃@(Tj)
Монтаж Surface Mount
Collector Current (DC) (Max) 0.1 A
Collector-Base Voltage 50(V)
Collector-Emitter Voltage 45(V)
Emitter-Base Voltage 6(V)
Frequency (Max) 100 MHz
Power Dissipation 0.3(W)
Mounting Surface Mount
Pin Count 3
Number of Elements 1
DC Current Gain (Min) 420
Operating Temperature Classification Military
Category Bipolar Small Signal
Rad Hardened No
Частота 100(MHz)
Collector Current (DC) 0.1(A)
DC Current Gain 420
Output Power Not Required(W)
Тип транзистора NPN
Напряжение Колл-Эмитт. Макс 45V
Ток коллектора Макс. 100mA
Мощность Макс. 300mW
Коэффициент усиления hFE 420
Тип монтажа Поверхностный
Collector Cut-Off Current (Icbo) 15nA
Collector-Emitter Breakdown Voltage (Vceo) 45V
Power Dissipation (Pd) 300mW
DC Current Gain (hFE@Ic,Vce) 420@2mA,5V
Collector Current (Ic) 100mA
Transition Frequency (fT) 100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 600mV@100mA,5mA
Standard Pack Qty (SPQ) 3000

Техническая документация

Аналоги

Цены BC847CLT1G onsemi на стоках