BC847CLT3G, SOT-23-3 (TO-236), Bipolar Transistors - BJT

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BC847CLT3G
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Параметры

Категория Bipolar Transistors - BJT
ECCN EAR99
Упаковка Reel, Cut Tape, Tape & Reel, Tape and Reel
Кол-во в упаковке 10000
Корпус SOT-23-3 (TO-236)
Вес, г 0.008
Тип NPN
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V
Мощность 300 mW
Frequency - Transition 100MHz
Рабочая температура -55℃~+150℃@(Tj)
Монтаж Surface Mount
Collector Current (DC) (Max) 0.1 A
Collector-Base Voltage 50(V)
Collector-Emitter Voltage 45(V)
Emitter-Base Voltage 6(V)
Frequency (Max) 100 MHz
Power Dissipation 0.3(W)
Mounting Surface Mount
Pin Count 3
Number of Elements 1
DC Current Gain (Min) 420
Operating Temperature Classification Military
Category Bipolar Small Signal
Rad Hardened No
Transistor Polarity NPN
Частота 100(MHz)
Collector Current (DC) 0.1(A)
DC Current Gain 420
Output Power Not Required(W)
Configuration Single
Product Class Name Transistors bipolaires - BJT
RoHS - Mouser Y
Mounting Style SMD/SMT
Collector- Emitter Voltage VCEO Max 45 V
Collector- Base Voltage VCBO 50 V
Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 600 mV
Maximum DC Collector Current 100 mA
Pd - Power Dissipation 225 mW
Gain Bandwidth Product fT 100 MHz
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series BC847CL
Continuous Collector Current 100 mA
DC Collector/Base Gain hfe Min 420
Высота 0.94 mm
Длина 2.9 mm
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Technology Si
Width 1.3 mm
Standard Pack Qty (SPQ) 10000
Collector Cut-Off Current (Icbo) 15nA
Collector-Emitter Breakdown Voltage (Vceo) 45V
Power Dissipation (Pd) 300mW
DC Current Gain (hFE@Ic,Vce) 420@2mA,5V
Collector Current (Ic) 100mA
Transition Frequency (fT) 100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 600mV@100mA,5mA

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