BC847CLT3G, SOT-23-3 (TO-236), Bipolar Transistors - BJT
onsemi
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Параметры
Категория | Bipolar Transistors - BJT |
ECCN | EAR99 |
Упаковка | Reel, Cut Tape, Tape & Reel, Tape and Reel |
Кол-во в упаковке | 10000 |
Корпус | SOT-23-3 (TO-236) |
Вес, г | 0.008 |
Тип | NPN |
Current - Collector (Ic) (Max) | 100 mA |
Voltage - Collector Emitter Breakdown (Max) | 45 V |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max) | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
Мощность | 300 mW |
Frequency - Transition | 100MHz |
Рабочая температура | -55℃~+150℃@(Tj) |
Монтаж | Surface Mount |
Collector Current (DC) (Max) | 0.1 A |
Collector-Base Voltage | 50(V) |
Collector-Emitter Voltage | 45(V) |
Emitter-Base Voltage | 6(V) |
Frequency (Max) | 100 MHz |
Power Dissipation | 0.3(W) |
Mounting | Surface Mount |
Pin Count | 3 |
Number of Elements | 1 |
DC Current Gain (Min) | 420 |
Operating Temperature Classification | Military |
Category | Bipolar Small Signal |
Rad Hardened | No |
Transistor Polarity | NPN |
Частота | 100(MHz) |
Collector Current (DC) | 0.1(A) |
DC Current Gain | 420 |
Output Power | Not Required(W) |
Configuration | Single |
Product Class Name | Transistors bipolaires - BJT |
RoHS - Mouser | Y |
Mounting Style | SMD/SMT |
Collector- Emitter Voltage VCEO Max | 45 V |
Collector- Base Voltage VCBO | 50 V |
Emitter- Base Voltage VEBO | 6 V |
Collector-Emitter Saturation Voltage | 600 mV |
Maximum DC Collector Current | 100 mA |
Pd - Power Dissipation | 225 mW |
Gain Bandwidth Product fT | 100 MHz |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Series | BC847CL |
Continuous Collector Current | 100 mA |
DC Collector/Base Gain hfe Min | 420 |
Высота | 0.94 mm |
Длина | 2.9 mm |
Product Type | BJTs - Bipolar Transistors |
Subcategory | Transistors |
Technology | Si |
Width | 1.3 mm |
Standard Pack Qty (SPQ) | 10000 |
Collector Cut-Off Current (Icbo) | 15nA |
Collector-Emitter Breakdown Voltage (Vceo) | 45V |
Power Dissipation (Pd) | 300mW |
DC Current Gain (hFE@Ic,Vce) | 420@2mA,5V |
Collector Current (Ic) | 100mA |
Transition Frequency (fT) | 100MHz |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 600mV@100mA,5mA |