SBC847CLT1G, SOT-23-3 (TO-236), Bipolar Transistors - BJT
onsemi
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Параметры
| Категория | Bipolar Transistors - BJT |
| ECCN | EAR99 |
| Упаковка | Reel, Cut Tape, Tape & Reel, Tape and Reel (лента в катушке) |
| Кол-во в упаковке | 3000 |
| Корпус | SOT-23-3 (TO-236) |
| Вес, г | 0.008 |
| Тип | NPN |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Мощность | 300 mW |
| Frequency - Transition | 100MHz |
| Рабочая температура | -55℃~+150℃@(Tj) |
| Grade | Automotive |
| Qualification | AEC-Q100 |
| Монтаж | Surface Mount |
| Product Class Name | Transistors bipolaires - BJT |
| RoHS - Mouser | Y |
| Mounting Style | SMD/SMT |
| Transistor Polarity | NPN |
| Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 45 V |
| Collector- Base Voltage VCBO | 50 V |
| Emitter- Base Voltage VEBO | 6 V |
| Collector-Emitter Saturation Voltage | 600 mV |
| Maximum DC Collector Current | 100 mA |
| Pd - Power Dissipation | 225 mW |
| Gain Bandwidth Product fT | 100 MHz |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Series | BC847CL |
| Continuous Collector Current | 100 mA |
| DC Collector/Base Gain hfe Min | 420 |
| Высота | 0.94 mm |
| Длина | 2.9 mm |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Technology | Si |
| Width | 1.3 mm |
| Collector Cut-Off Current (Icbo) | 15nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 45V |
| Power Dissipation (Pd) | 300mW |
| DC Current Gain (hFE@Ic,Vce) | 420@2mA,5V |
| Collector Current (Ic) | 100mA |
| Transition Frequency (fT) | 100MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 600mV@5mA,100mA |
| Standard Pack Qty (SPQ) | 3000 |