BC847C-TP, SOT-23, Bipolar Transistors - BJT

Micro Commercial Components (MCC)

BC847C-TP
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Параметры

Категория Bipolar Transistors - BJT
ECCN EAR99
Упаковка Reel, Cut Tape, Tape & Reel, Tape and Reel
Кол-во в упаковке 3000
Корпус SOT-23
Вес, г 0.034
Collector Cut-Off Current (Icbo) 100nA
Collector-Emitter Breakdown Voltage (Vceo) 45V
Power Dissipation (Pd) 225mW
DC Current Gain (hFE@Ic,Vce) 420@2mA,5V
Collector Current (Ic) 100mA
Transition Frequency (fT) 100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 500mV@100mA,5mA
Тип NPN
Рабочая температура -55C to 150C
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V
Мощность 225 mW
Frequency - Transition 100MHz
Монтаж Surface Mount
Collector Current (DC) (Max) 0.1 A
Collector-Base Voltage 50(V)
Collector-Emitter Voltage 45(V)
Emitter-Base Voltage 6(V)
Frequency (Max) 100 MHz
Power Dissipation 0.225(W)
Mounting Surface Mount
Pin Count 3
Number of Elements 1
DC Current Gain (Min) 420
Operating Temperature Classification Military
Category Bipolar Small Signal
Rad Hardened No
Transistor Polarity NPN
Частота 100(MHz)
DC Current Gain 420
Collector Current (DC) 0.1(A)
Output Power Not Required(W)
Configuration Single

Техническая документация

Аналоги

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