BC847CW,135, SOT-323-3, Bipolar Transistors - BJT

Nexperia

BC847CW,135
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Параметры

Категория Bipolar Transistors - BJT
ECCN EAR99
Упаковка Reel, Cut Tape, Tape & Reel
Кол-во в упаковке 10000
Корпус SOT-323-3
Вес, г 0.005
Product Class Name Transistors bipolaires - BJT
RoHS - Mouser Y
Mounting Style SMD/SMT
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 45 V
Collector- Base Voltage VCBO 50 V
Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 200 mV
Maximum DC Collector Current 100 mA
Pd - Power Dissipation 200 mW
Gain Bandwidth Product fT 100 MHz
Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 420 at 2 mA, 5 V
DC Current Gain hFE Max 420 at 2 mA, 5 V
Высота 1 mm
Длина 2.2 mm
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Technology Si
Width 1.35 mm
Part # Aliases 934021780135
Тип NPN
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V
Мощность 200 mW
Frequency - Transition 100MHz
Рабочая температура 150°C (TJ)
Монтаж Surface Mount
Collector Cut-Off Current (Icbo) 15nA
Collector-Emitter Breakdown Voltage (Vceo) 45V
Power Dissipation (Pd) 200mW
DC Current Gain (hFE@Ic,Vce) 420@2mA,5V
Collector Current (Ic) 100mA
Transition Frequency (fT) 100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 200mV@100mA,5mA
Package SOT323
Standard Pack Qty (SPQ) 10000
Box Qty 10000

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