BC847CW, SOT-323, Bipolar Transistors - BJT

Diotec Semiconductor

BC847CW
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Параметры

Категория Bipolar Transistors - BJT
ECCN EAR99
Упаковка Reel, Cut Tape, Tape and Reel (лента в катушке)
Кол-во в упаковке 3000
Корпус SOT-323
Вес, г 0.032
Collector Cut-Off Current (Icbo) 100nA
Collector-Emitter Breakdown Voltage (Vceo) 45V
Power Dissipation (Pd) 200mW
DC Current Gain (hFE@Ic,Vce) 420@2mA,5V
Collector Current (Ic) 100mA
Transition Frequency (fT) 100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 500mV@100mA,5mA
Тип NPN
Рабочая температура +150℃@(Tj)
Product Class Name Transistors bipolaires - BJT
RoHS - Mouser Y
Mounting Style SMD/SMT
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 45 V
Collector- Base Voltage VCBO 50 V
Emitter- Base Voltage VEBO 6 V, 5 V
Collector-Emitter Saturation Voltage 600 mV
Maximum DC Collector Current 100 mA
Pd - Power Dissipation 200 mW
Gain Bandwidth Product fT 100 MHz
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series BCXXX
DC Current Gain hFE Max 520
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Tradename BC847CW
Continuous Collector Current 100 mA
DC Collector/Base Gain hfe Min 420 at 2 mA, 5 V
Высота 1 mm
Длина 2.2 mm
Technology Si
Width 1.35 mm

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