BC847CW-7-F, SOT-323-3, Bipolar Transistors - BJT
Diodes
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Параметры
Категория | Bipolar Transistors - BJT |
ECCN | EAR99 |
Упаковка | Reel, Cut Tape, Tape & Reel |
Кол-во в упаковке | 3000 |
Корпус | SOT-323-3 |
Вес, г | 0.005 |
Product Class Name | Transistors bipolaires - BJT |
RoHS - Mouser | Y |
Mounting Style | SMD/SMT |
Transistor Polarity | NPN |
Configuration | Single |
Collector- Emitter Voltage VCEO Max | 45 V |
Collector- Base Voltage VCBO | 50 V |
Emitter- Base Voltage VEBO | 6 V |
Collector-Emitter Saturation Voltage | 200 mV |
Maximum DC Collector Current | 100 mA |
Pd - Power Dissipation | 200 mW |
Gain Bandwidth Product fT | 100 MHz |
Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 150 C |
Series | BC847C |
DC Collector/Base Gain hfe Min | 420 at 2 mA, 5 V |
Высота | 1 mm |
Длина | 2.2 mm |
Product Type | BJTs - Bipolar Transistors |
Subcategory | Transistors |
Technology | Si |
Width | 1.35 mm |
Collector Cut-Off Current (Icbo) | 20nA |
Collector-Emitter Breakdown Voltage (Vceo) | 45V |
Power Dissipation (Pd) | 200mW |
DC Current Gain (hFE@Ic,Vce) | 420@2mA,5V |
Collector Current (Ic) | 100mA |
Transition Frequency (fT) | 300MHz |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@100mA,5mA |
Тип | NPN |
Рабочая температура | -65°C ~ 150°C (TJ) |
Current - Collector (Ic) (Max) | 100 mA |
Voltage - Collector Emitter Breakdown (Max) | 45 V |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max) | 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
Мощность | 200 mW |
Frequency - Transition | 300MHz |
Монтаж | Surface Mount |