BC847CWT3G, SC-70-3, Bipolar Transistors - BJT

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BC847CWT3G
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Параметры

Категория Bipolar Transistors - BJT
ECCN EAR99
Упаковка Reel, Cut Tape, Tape & Reel
Кол-во в упаковке 10000
Корпус SC-70-3
Вес, г 0.028
Product Class Name Transistors bipolaires - BJT
RoHS - Mouser Y
Mounting Style SMD/SMT
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 45 V
Collector- Base Voltage VCBO 50 V
Emitter- Base Voltage VEBO 6 V
Maximum DC Collector Current 100 mA
Pd - Power Dissipation 150 mW
Gain Bandwidth Product fT 100 MHz
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series BC847CWT3G
DC Collector/Base Gain hfe Min 270
Высота 0.85 mm
Длина 2.1 mm
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Technology Si
Width 1.24 mm
Collector Cut-Off Current (Icbo) 15nA
Collector-Emitter Breakdown Voltage (Vceo) 45V
Power Dissipation (Pd) 150mW
DC Current Gain (hFE@Ic,Vce) 420@2mA,5V
Collector Current (Ic) 100mA
Transition Frequency (fT) 100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 600mV@100mA,5mA
Тип NPN
Рабочая температура -55°C ~ 150°C (TJ)
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V
Мощность 150 mW
Frequency - Transition 100MHz
Монтаж Surface Mount
Standard Pack Qty (SPQ) 10000

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