IRF640NPBF, TO-220-3, MOSFET
Infineon Technologies
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Параметры
| Категория | MOSFET |
| ECCN | EAR99 |
| Упаковка | Tube, Tube (туба), Rail/Tube |
| Кол-во в упаковке | 1000 |
| Корпус | TO-220-3 |
| Вес, г | 2 |
| Product Class Name | MOSFET |
| RoHS - Mouser | Y |
| Technology | MOSFET (Metal Oxide) |
| Mounting Style | Through Hole |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Id - Continuous Drain Current | 18 A |
| Rds On - Drain-Source Resistance | 150 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 44.7 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 150 W |
| Channel Mode | Enhancement |
| Configuration | Single |
| Fall Time | 5.5 ns |
| Forward Transconductance - Min | 6.8 S |
| Высота | 15.65 mm |
| Длина | 10 mm |
| Product Type | MOSFET |
| Rise Time | 19 ns |
| Subcategory | MOSFETs |
| Тип | 1 N-Channel |
| Typical Turn-Off Delay Time | 23 ns |
| Typical Turn-On Delay Time | 10 ns |
| Width | 4.4 mm |
| Напряжение исток-сток макс. | 200В |
| Ток стока макс. | 18A |
| Сопротивление открытого канала | 150 мОм |
| Мощность макс. | 150Вт |
| Тип транзистора | N-канал |
| Пороговое напряжение включения макс. | 4В |
| Заряд затвора | 67нКл |
| Входная емкость | 1160пФ |
| Тип монтажа | Through Hole |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1160 pF @ 25 V |
| Power Dissipation (Max) | 150W (Tc) |
| Рабочая температура | -55℃~+175℃@(Tj) |
| Монтаж | Through Hole |
| Continuous Drain Current | 18(A) |
| Power Dissipation | 150 W |
| Mounting | Through Hole |
| Operating Temperature Classification | Military |
| Type | 1 N-Channel |
| Rad Hardened | No |
| Pin Count | 3 +Tab |
| Polarity | N |
| Drain-Source On-Volt | 200(V) |
| Number of Elements | 1 |
| Gate-Source Voltage (Max) | ±20(V) |
| Channel Type | N Channel |
| rohsCompliant | YES |
| Product Range | - |
| hazardous | false |
| rohsPhthalatesCompliant | YES |
| Rds(on) Test Voltage | 10 V |
| Drain Source On State Resistance | 0.15 ohm |
| Continuous Drain Current Id | 18 A |
| Operating Temperature Max | 175 °C |
| Transistor Mounting | Through Hole |
| MSL | - |
| usEccn | EAR99 |
| Gate Source Threshold Voltage Max | 4 V |
| euEccn | NLR |
| Qualification | - |
| Drain Source Voltage Vds | 200 V |
| Transistor Case Style | TO-220AB |
| productTraceability | No |
| No. of Pins | 3 Pins |
| SVHC | No SVHC (23-Jan-2024) |
| Package | TO220 |
| Standard Pack Qty (SPQ) | 50 |
| Packing Option | TUBE |
| Box Qty | 1000 |
| Dry Pack | NON DRY |
| Drain Source Voltage (Vdss) | 200V |
| Continuous Drain Current (Id) | 18A |
| Power Dissipation (Pd) | 150W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 150mΩ@10V,11A |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Input Capacitance (Ciss@Vds) | 1.16nF@25V |
| Total Gate Charge (Qg@Vgs) | 67nC@10V |