IRF640NPBF, TO-220-3, MOSFET

Infineon Technologies

IRF640NPBF
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Параметры

Категория MOSFET
ECCN EAR99
Упаковка Tube, Tube (туба), Rail/Tube
Кол-во в упаковке 1000
Корпус TO-220-3
Вес, г 2
Product Class Name MOSFET
RoHS - Mouser Y
Technology MOSFET (Metal Oxide)
Mounting Style Through Hole
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 18 A
Rds On - Drain-Source Resistance 150 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 44.7 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 150 W
Channel Mode Enhancement
Configuration Single
Fall Time 5.5 ns
Forward Transconductance - Min 6.8 S
Высота 15.65 mm
Длина 10 mm
Product Type MOSFET
Rise Time 19 ns
Subcategory MOSFETs
Тип 1 N-Channel
Typical Turn-Off Delay Time 23 ns
Typical Turn-On Delay Time 10 ns
Width 4.4 mm
Напряжение исток-сток макс. 200В
Ток стока макс. 18A
Сопротивление открытого канала 150 мОм
Мощность макс. 150Вт
Тип транзистора N-канал
Пороговое напряжение включения макс.
Заряд затвора 67нКл
Входная емкость 1160пФ
Тип монтажа Through Hole
FET Type N-Channel
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1160 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Рабочая температура -55℃~+175℃@(Tj)
Монтаж Through Hole
Continuous Drain Current 18(A)
Power Dissipation 150 W
Mounting Through Hole
Operating Temperature Classification Military
Type 1 N-Channel
Rad Hardened No
Pin Count 3 +Tab
Polarity N
Drain-Source On-Volt 200(V)
Number of Elements 1
Gate-Source Voltage (Max) ±20(V)
Channel Type N Channel
rohsCompliant YES
Product Range -
hazardous false
rohsPhthalatesCompliant YES
Rds(on) Test Voltage 10 V
Drain Source On State Resistance 0.15 ohm
Continuous Drain Current Id 18 A
Operating Temperature Max 175 °C
Transistor Mounting Through Hole
MSL -
usEccn EAR99
Gate Source Threshold Voltage Max 4 V
euEccn NLR
Qualification -
Drain Source Voltage Vds 200 V
Transistor Case Style TO-220AB
productTraceability No
No. of Pins 3 Pins
SVHC No SVHC (23-Jan-2024)
Package TO220
Standard Pack Qty (SPQ) 50
Packing Option TUBE
Box Qty 1000
Dry Pack NON DRY
Drain Source Voltage (Vdss) 200V
Continuous Drain Current (Id) 18A
Power Dissipation (Pd) 150W
Drain Source On Resistance (RDS(on)@Vgs,Id) 150mΩ@10V,11A
Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
Input Capacitance (Ciss@Vds) 1.16nF@25V
Total Gate Charge (Qg@Vgs) 67nC@10V

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