PJP18N20_T0_00001, Triode/MOS Tube/Transistor
PANJIT International
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Параметры
| Категория | Triode/MOS Tube/Transistor |
| Вес, г | 1 |
| Drain Source Voltage (Vdss) | 200V |
| Continuous Drain Current (Id) | 18A |
| Power Dissipation (Pd) | 89W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 160mΩ@9A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Type | null |
| Input Capacitance (Ciss@Vds) | 1.017nF@25V |
| Total Gate Charge (Qg@Vgs) | 24nC@10V |
| Рабочая температура | -55℃~+150℃@(Tj) |